1 sheet no.: d1-a02201en date: november 30, 2007 ?sharp corporation PT4800FE000F PT4800FE000F opaque resin, medium directivity angle, thin package phototransistor notice the content of data sheet is subject to change without prior notice. in the absence of confirmation by device specification sheets, sharp takes no responsibility for any defects that may occur in equipment using any sharp devices shown in catalogs, data books, etc. contact sharp in order to obtain the la test device specification sheets before usin g any sharp device. features 1. side view detection thin package 2. plastic mold with opaque resin lens 3. peak sensitivity wavelength: 860 nm (typ.) 4. medium directivity angle ( ? 35 typ.) 5. lead free and rohs directive compliant agency approvals/compliance 1. compliant with rohs directive (2002/95/ec) 2. content information about the six substances specified in ?management methods for control of pollution caused by electronic information prod- ucts regulation? (popular name: china rohs) (chinese: ); refer to page 7. applications 1. telecommunications equipment 2. home appliances 3. office automation equipment 4. audio visual equipment
sheet no.: d1-a02201en 2 PT4800FE000F external dimensions 3.5 1.6 1.65 0. 8 1.50 ( 0. 8 ) 1.0 e.pi n 1.50 e.pi n 8 8 8 8 2 2 (r0.45) 1.6 2-c0-.5 0. 8 3.0 0.5 mi n . 1.7 (2.54) 17.5 0.5 1. 8 2 - 0.9 1.0 0. 8 0.2 max. b u rr resin 0.1 max. 0.7 0.3 max. b u rr resin 8 8 2 2 0.1 max. 2-0.25 +0.3 -0.1 2-0.45 +0.3 -0.1 1 2 1 2 emitter collector no. name pin arran g ement terminal connection 1 2 notes: 1. units: mm 2. unspecified tolerence: 0.2 mm 3. ( ): reference dimensions 4. package: black ( v isi b le light c u t-off resin) 5. the thin bu rr thickness (0.05 mm max.) is not incl u ded in o u tline dimensions 6. resin protr u sion: 0.3 mm max. 7. ho w e v er, the thin bu rr adhering to the lead is 1. 8 mm max. from the resin. 0.3 max. b u rr gate
sheet no.: d1-a02201en 3 PT4800FE000F absolute maximum ratings * 1 3 s (max.) at 1.8 mm from resin edge. electro-optical characteristics * 1 ee: irradiance by cie standard light source a (tungsten lamp) collector current ranking * 1 quantities and ratios of any one ranking in any one shipment are at the discretion of sharp. parameter symbol rating unit collector-emitter voltage v ceo 35 v emitter-collector voltage v eco 6v collector current i c 20 ma collector power dissipation p c 75 mw operating temperature topr -25 to +85 c storage temperature tstg -40 to +85 c soldering temperature *1 tsol 260 c parameter symbol conditions *1 min. typ. max. unit collector current i c ee = 1 mw/cm 2 , v ce = 5 v 0.08 0.25 0.75 ma dark current i ceo ee = 0, v ce = 20 v ? ? 100 na collector-emitter saturation voltage v ce (sat) ee = 10 mw/cm 2 , i c = 0.5 ma ? ? 0.4 v collector-emitter breakdown voltage bv ceo i c = 0.1 ma, ee = 0 35 ? ? v emitter-collector breakdown voltage bv eco i e = 0.01 ma, ee = 0 6 ? ? v peak sensitivity wavelength p??860?nm response time (rise) tr v ce = 2 v, i c = 2 ma, r l = 100 ?3.0 ? s response time (fall) tf ? 3.5 ? s half intensity angle ? ? 35 ? degrees rank collector current ic (ma) a 0.08 to 0.19 b 0.15 to 0.38 c 0.3 to 0.75 (ta = 25c) (ta = 25c)
sheet no.: d1-a02201en 4 PT4800FE000F fig. 1 collector po wer dissipation vs. ambient temperature fig. 2 spectral sensitivity (typ.) 8 0 75 70 60 50 40 30 20 15 10 -25 0 25 am b ient temperat u re ta (c) 50 75 8 5100 0 collector po w er dissipation pc (m w ) 400 500 600 700 8 00 900 ta = 25c 1000 1100 w a v elength (nm) 100 8 0 60 40 20 0 relati v e sensiti v ity (%) fig. 3 collector dark current vs. ambient temperature fig. 4 relative coll ector current vs. ambient temperature 10 -6 10 -7 10 - 8 collector dark c u rrent i ceo (a) v ce = 20 v 10 -9 10 -10 0 25 50 75 100 am b ient temperat u re ta (c) 40 0 0 20 10 20 30 40 70 50 60 160 v ce = 5 v ee = 1 m w /cm 2 100 60 8 0 120 140 relati v e collector c u rrent (%) am b ient temperat u re ta (c)
sheet no.: d1-a02201en 5 PT4800FE000F fig. 5 collector cu rrent vs. irradiance fig. 6 collector current vs. collector-emitter voltage v ce = 5 v ta = 25c 110 0.1 1 0.1 10 collector c u rrent i c (ma) irradiance ee (m w /cm 2 ) 0246 8 10 12 14 collector-emitter v oltage v ce ( v ) 0 0.2 0.4 0.6 0. 8 1.0 1.2 collector c u rrent i c (ma) 0. 8 m w /cm 2 1.0 m w /cm 2 1.5 m w /cm 2 2.0 m w /cm 2 2.5 m w /cm 2 ee = 3 m w /cm 2 0.6 m w /cm 2 ta = 25c fig. 7 response time vs. load resistance fig. 8 test circui t for response time 1 10 0.1 10 1 100 load resistance r l (k ) response time t r , t f ( s) t f t f t r t r v ce = 2 v i c = 2 ma ta = 25c o u tp u t o u tp u t v cc r l inp u t t f t r t d t s 90% 10%
sheet no.: d1-a02201en 6 PT4800FE000F fig. 9 sensitivity vs. axis fig. 10 collector-to-e mitter saturation voltage vs. irradience 0 relati v e sensiti v ity (%) 8 0 20 40 60 100 +30 -20 -30 -40 -50 -60 -70 - 8 0 -90 -10 0 +10 +20 (ta = 25c) +40 +50 +60 +70 +70 + 8 0 +90 ang u lar displacement ta = 25c i c = 0.05 ma 0.1 ma 0.5 ma 1.0 ma 1.5 ma 2.0 ma 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 collector-emitter-emitter sat u ration v oltage v ce (sat) ( v ) 1 0.1 10 irradiance ee ( m w /cm 2 ) fig. 11 relative output vs distance 110 1 10 100 (emitter: gl4 8 00e0000f) distance b et w een emitter and detector (mm) relati v e o u tp u t (%) graph data is for reference only and is not guaranteed data.
sheet no.: d1-a02201en 7 PT4800FE000F design notes 1. this product is not designed to resist el ectromagnetic and ionized-particle radiation. manufacturing guidelines soldering instructions 1. sharp does not recommend soldering this part using pre heat or solder reflow methods. leads on this part are pre-coated with lead-free solder. 2. if hand soldering, use temperatures 260c for 3 seconds. 3. when mounting this device, care should be taken to prevent any boundary exfoliation (pad lifting) between the solder, the pad, and the circuit board. 4. do not subject the package to excessive mechanical force during soldering as it may cause deformation or defects in plated connections. internal connections may be severed due to mechanical force placed on the pack- age due to the pcb flexing during the soldering process. cleaning instructions 1. confirm this device's resistance to process chemicals be fore use, as certain process chemicals may affect the optical characteristics. 2. solvent cleaning: solvent temperature should be 45c or below. immersion time should be 3 minutes or less. 3. ultrasonic cleaning: the effect upon devices varies d ue to cleaning bath size, ultrasonic power output, cleaning time, pcb size and device mounting circumstances. sharp recommends testing using actual production condi- tions to confirm the harmlessness of the ultrasonic cleaning methods. 4. recommended solvent materials: ethyl alcohol, methyl alcohol, and isopropyl alcohol. presence of odcs (rohs compliance) this product shall not contain the following materials, and they are not used in the production process for this product: ? regulated substances: cfcs, halon, carbon tetrachlor ide, 1,1,1-trichloroethane (methylchloroform). specific brominated flame retardants such as the pbbos and pbbs are not used in this product at all. this product shall not contain the following materials banned in the rohs directive (2002/95/ec). ? lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (pbb), polybrominated diphenyl ethers (pbde). ? content information about the six substances specified in ?management methods for control of pollution caused by electronic informatio n products regulation? (chinese: ) note: ? indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the conc entration limit requirement as described in sj/t 11363-2006 standard. category toxic and hazdardous substances lead (pb) mercury (hg) cadmium (cd) hexavalent chromiun (cr 6+ ) polybrominated biphenyls (pbb) polybrominated diphenyl ethers (pbde) photo transistor ??????
sheet no.: d1-a02201en 8 PT4800FE000F packing specifications 1. parts are packed in a plastic zipper bag, with 1000 pieces per bag. 2. bags are secured in a box as shown in figure 12. 3. product mass: 0.07 g (approximately) fig. 12 packing composition inner packin g plastic zipper b ag prod u ct (1000 pcs) notes: 1. inner packing material : plastic zipper b ag (polyethylene) 2. q u antity: 1000 pcs/ b ag cellophane tape model n o., q u antity, and lot n o. notes: 1. o u ter material : packing case (corr u gated card b oard), c u shioning material (urethane), cellophane tape 2. q u antity: 5000 pcs/ b ox 3. reg u lar packaged mass: approximately 460 g 4. indication: model n o., q u antity, and lot n o. outer packin g plastic zipper b ag w ith prod u cts (5 b ags) packing case c u shioning material (2 sheets) c u shioning material (2 sheets)
important notices the circuit application examples in this publication are provided to explain representative applications of sharp devices and are not intended to guarantee any circuit design or license any intellectual property rights. sharp takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of sharp?s devices. contact sharp in order to obtain the latest device specification sheets before using any sharp device. sharp reserves the right to make changes in the specifications, characteristi cs, data materials, struc- ture, and other contents described herein at any time without notice in order to im prove design or reliability. manufacturing locations are also subject to change without notice. observe the following points when using any devices in this publication. sharp takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) the devices in this publication are designed for use in general electronic equipment designs such as: --- personal computers --- office automation equipment --- telecommunication equipment (terminal) --- test and measurement equipment --- industrial control --- audio visual equipment --- consumer electronics (ii) measures such as fail-safe function and redundant design should be taken to en sure reliability and safety when sharp devices are used for or in connection with equipment that requires higher reliabilty such as: --- transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- traffic signals --- gas leakage sensor breakers --- alarm equipment --- various safety devices, etc. (iii) sharp devices shall not be used for or in connec- tion with equipment that requires an extremely high level of reliability an d safety such as: --- space applications --- telecommunication equipment (trunk lines) --- nuclear power control equipment --- medical and other life support equipment (e.g. scuba) if the sharp devices listed in this publication fall within the scope of strategic products described in the foreign exchange and foreign trade law of japan, it is necessary to obtain approval to export such sharp devices. this publication is the proprietary product of sharp and is copyrighted, with all rights reserved. under the copyright laws, no part of this publication may be repro- duced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of sharp. express written permission is also required before any use of this publication may be made by a third party. contact and consult with a sharp representative if there are any questions about the contents of this pub- lication. sheet no.: d1-a02201en 9 PT4800FE000F
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